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this is preliminary information on a new product now in deve lopment or undergoing evaluation. details are subject to change without notice. april 2012 doc id 023096 rev 1 1/12 12 STFI260N6F6 n-channel 60 v, 0.0024 , 80 a stripfet? vi deepgate? power mosfet in i2pakfp package datasheet ? preliminary data features fully insulated and low profile package with increased creepage path from pin to heatsink plate low gate charge very low on-resistance high avalanche ruggedness application switching applications description this device is an n-channel power mosfet developed using the 6 th generation of stripfet? deepgate? technology, with a new gate structure. the resulting power mosfet exhibits the lowest r ds(on) in all packages. figure 1. internal schematic diagram order codes v dss r ds(on) max i d STFI260N6F6 60 v < 0.003 80 a i2pakfp (to-281) 1 2 3 !-v $ ' 3 table 1. device summary order codes marking package packaging STFI260N6F6 260n6f6 i2pak (to-281) tu b e www.st.com
contents STFI260N6F6 2/12 doc id 023096 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STFI260N6F6 electrical ratings doc id 023096 rev 1 3/12 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 60 v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 c 80 (1) a i d drain current (continuous) at t c = 100 c 80 (1) a i dm (1) 1. current limited by package. drain current (pulsed) 320 a p tot total dissipation at t c = 25 c 41.7 w derating factor 0.28 w/c t stg storage temperature - 55 to 175 c t j operating junction temperature table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 3.6 c/w r thj-a thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c
electrical characteristics STFI260N6F6 4/12 doc id 023096 rev 1 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 250 a 60 v i dss zero gate voltage drain current (v gs = 0) v ds = 60 v 1 a v ds = 60 v, t c =125 c 100 a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 4 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 60 a 2.4 3 m table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 25 v, f = 1 mhz, v gs = 0 - 11400 - pf c oss output capacitance 1100 pf c rss reverse transfer capacitance 400 pf q g total gate charge v dd = 30 v, i d = 120 a, v gs = 10 v (see figure 14) - 183 - nc q gs gate-source charge 53 nc q gd gate-drain charge 41 nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 30 v, i d = 60 a r g =4.7 v gs = 10 v (see figure 13) - 31.4 165 - ns ns t d(off) t f turn-off-delay time fall time - 144.4 62.6 - ns ns
STFI260N6F6 electrical characteristics doc id 023096 rev 1 5/12 table 7. source drain diode symbol parameter test conditions min. typ. max unit i sd source-drain current - 120 a i sdm (1) 1. current limited by package. source-drain current (pulsed) - 480 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 120 a, v gs = 0 - 1.1 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 120 a, v dd = 48 v di/dt = 100 a/s, t j = 150 c (see figure 15) - 55.6 116 3.8 ns nc a
electrical characteristics STFI260N6F6 6/12 doc id 023096 rev 1 2.1 electrical characteri stics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized b vdss vs. temperature figure 7. static drain-source on-resistance i d 100 10 1 0.1 1 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 100 s 1m s 10m s tj=175c tc=25c s inlge p u l s e am1262 3 v1 i d 150 100 50 0 0 2 v d s (v) (a) 1 3 200 250 5v 6v v g s =10v 3 00 3 50 400 am09069v1 i d 150 100 50 0 0 2 v g s (v) 4 (a) 1 3 5 200 250 3 00 3 50 400 v d s =2v am09070v1 bv d ss -75 t j (c) (norm) -25 75 25 125 0.6 0.7 0. 8 0.9 1.0 1.1 175 i d =1ma am09071v1 r d s (on) 1.5 1.0 0.5 0.0 0 40 i d (a) (m ) 20 60 2.0 2.5 3 .0 3 .5 v g s =10v 100 8 0 120 4.0 am09072v1
STFI260N6F6 electrical characteristics doc id 023096 rev 1 7/12 figure 8. gate charge vs. gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs. temperature figure 11. normalized on-resistance vs. temperature figure 12. source-drain diode forward characteristics v g s 6 4 2 0 0 50 q g (nc) (v) 200 8 100 150 10 v dd = 3 0v i d =120a 12 am0907 3 v1 c 1000 100 0.1 10 v d s (v) (pf) 1 10000 ci ss co ss cr ss f=1mhz am09074v1 v g s (th) 0. 8 0.6 0.4 0.2 -75 t j (c) (norm) -25 1.0 75 25 125 175 i d =250 a 1.2 am09075v1 r d s (on) 2.0 1.5 1.0 0.5 -75 t j (c) (norm) -25 75 25 125 175 0 i d =60a v g s =10v am09076v1 v s d 0 40 i s d (a) (v) 20 100 60 8 0 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 t j =-55c t j =175c t j =25c 120 am09077v1
test circuits STFI260N6F6 8/12 doc id 023096 rev 1 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive wavefor m figure 18. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STFI260N6F6 package mechanical data doc id 023096 rev 1 9/12 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data STFI260N6F6 10/12 doc id 023096 rev 1 figure 19. i 2 pakfp (to-281) drawing table 8. i 2 pakfp (to-281) mechanical data dim. mm min. typ. max. a4.40 - 4.60 b 2.50 2.70 d 2.50 2.75 d1 0.65 0.85 e 0.45 0.70 f 0.75 1.00 f1 1.20 g 4.95 5.20 h 10.00 10.40 l1 21.00 23.00 l2 13.20 14.10 l3 10.55 10.85 l4 2.70 3.20 l5 0.85 1.25 l6 7.30 7.50 rev!
STFI260N6F6 revision history doc id 023096 rev 1 11/12 5 revision history table 9. document revision history date revision changes 13-apr-2012 1 first release.
STFI260N6F6 12/12 doc id 023096 rev 1 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2012 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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